NEC - Gate drive optocoupler with MOSFET-MOSFET output

Higher switching speed and lower voltage drop:

Stutensee (Germany) – NEC Electronics’ new PS9505 and PS9305 gate drive optocouplers with MOSFET-MOSFET output (Distribution: Gleichmann Electronics) allow an especially efficient and safe IGBT drive. The combination of a galvanically isolated GaAlAs LED at the input side and a photo diode with signal processing circuit and power stage at the output side not only enable a switching speeds of greater than 1 MHz, but also output currents of up to 2.5 A. The PS9505 and PS9305 optocouplers are therefore ideally suited for industrial inverter and motor control applications where a microcontroller unit needs to be galvanically isolated from the high voltage side.

Features of both devices include a slew rate tphl/tplh of 0.25 μs maximum, a small pulse width distortion of 0.1 μs maximum, a minimum output voltage of Vcc -3 V at IO = -100 mA, an operating current limited to 3 mA maximum, an integrated UVLO circuit with hysteresis and a high common mode transient immunity (CMR) of minimum 25 kV/μs.

The optocouplers are designed for an operating temperature of up to 110°C and are offered in two package versions. The PS9505 comes in a conventional 8-pin dual inline package (DIP) and the PS9305 is offered in an 8-pin shrink dual inline package (SDIP) that reduces the board space requirement by almost half. With greater than 0.4 mm isolation distance and 5000 Vr.m.s. isolation voltage, both the DIP and SDIP versions offer excellent isolation characteristics.

Datasheets and sample quantities of the PS9505 and PS9305 series are available now. Start of volume production is planned for December 2009.